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NEW ZHANCHI;PIO YUBO Institute of Nuclear Research, Lanzhou University P. O. Box, 31. THE COLD TRAP WITH THE PARALLEL DOUBLE BASE SEMICONDUCTOR[J]. Atomic Energy Science and Technology, 1986, 20(4): 481-481. DOI: 10.7538/yzk.1986.20.04.0481
Citation: NEW ZHANCHI;PIO YUBO Institute of Nuclear Research, Lanzhou University P. O. Box, 31. THE COLD TRAP WITH THE PARALLEL DOUBLE BASE SEMICONDUCTOR[J]. Atomic Energy Science and Technology, 1986, 20(4): 481-481. DOI: 10.7538/yzk.1986.20.04.0481
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THE COLD TRAP WITH THE PARALLEL DOUBLE BASE SEMICONDUCTOR

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  • The semiconductor cold trap is made to be more compact, more economicaland more effective than the other types of cold traps. It is used for the vacuumsystem of intense neutron generators. The cold plate terminal temperature is--34℃ and the rate of return oil is only 2.7×10~(-8) g/cm~2·min.
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