Advanced Search
XU YUANCHAO;LI FENGXIA Institute of Atomic Energy, P. O. Box 275, Beijing. THE STUDY ON ANNEALING OF DETECTOR-GRADE NTD SILICON[J]. Atomic Energy Science and Technology, 1988, 22(2): 169-169. DOI: 10.7538/yzk.1988.22.02.0169
Citation: XU YUANCHAO;LI FENGXIA Institute of Atomic Energy, P. O. Box 275, Beijing. THE STUDY ON ANNEALING OF DETECTOR-GRADE NTD SILICON[J]. Atomic Energy Science and Technology, 1988, 22(2): 169-169. DOI: 10.7538/yzk.1988.22.02.0169
shu

THE STUDY ON ANNEALING OF DETECTOR-GRADE NTD SILICON

    Graphical Abstract
    • Abstract
  • The thermal treatment is one of the main processes for the production ofdetector-grade (DG) silicon by neutron transmutation doping (NTD), it is requi-red to maintain and to enhance minority carrier lifetime of the silicon crystalduring the treatment. In this work annealling of DG-NTD Si is performed indiffusion furnaces under controlled temperature and with HCl added into theprotective atmosphere, After annealling the minority carrier lifetime is over 1000μs,the homogeneity of the resistivity is good.
    • FullText(HTML)
  • loading
    • References (9)
    • Related Articles

Catalog

    Turn off MathJax
    Article Contents

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return