H DEPTH PROFILING IN SOLID BY ERD WITH C IONS

LIU JIARUI;ZHU PEIRAN;FENG AIGUO;LI DAWAN Institute of Physics, Academia Sinica. Beijing Dept. of Physics, Central Institute of Nationalities, Beijing

doi:10.7538/yzk.1990.24.03.0007

LIU JIARUI;ZHU PEIRAN;FENG AIGUO;LI DAWAN Institute of Physics, Academia Sinica. Beijing Dept. of Physics, Central Institute of Nationalities, Beijing. H DEPTH PROFILING IN SOLID BY ERD WITH C IONS[J]. Atomic Energy Science and Technology, 1990, 24(3): 7-7. DOI: 10.7538/yzk.1990.24.03.0007

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H DEPTH PROFILING IN SOLID BY ERD WITH C IONS

LIU JIARUI;ZHU PEIRAN;FENG AIGUO;LI DAWAN Institute of Physics, Academia Sinica. Beijing Dept. of Physics, Central Institute of Nationalities, Beijing

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Hydrogen depth profiling in α-Si:H is performed by Elastic Recoil Detection(ERD) with multicharged C ions at 2×1.7 MV Tandem Accelerator. Both experl-ment and computer simulation show the depth resolution of 15--30 nm in thenear-surface region. The optimization of the experimental conditions such asincident ions energy and scattering geometry are discussed.

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H DEPTH PROFILING IN SOLID BY ERD WITH C IONS

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