300 KeV Xe~(2+) ION BEAM INDUCED REACTION AT THE INTERFACE OF METAL AND SILICON

MAO SINING;YANG XIHONG;CHENJ IAN;LIU JIARUI;GAO WENYU;ZHU PEIRAN Department of Technical Physics. Peking University Institute of Physics, Academic Sinica, Beijing

doi:10.7538/yzk.1990.24.05.0035

MAO SINING;YANG XIHONG;CHENJ IAN;LIU JIARUI;GAO WENYU;ZHU PEIRAN Department of Technical Physics. Peking University Institute of Physics, Academic Sinica, Beijing. 300 KeV Xe~(2+) ION BEAM INDUCED REACTION AT THE INTERFACE OF METAL AND SILICON[J]. Atomic Energy Science and Technology, 1990, 24(5): 35-35. DOI: 10.7538/yzk.1990.24.05.0035

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300 KeV Xe~(2+) ION BEAM INDUCED REACTION AT THE INTERFACE OF METAL AND SILICON

MAO SINING;YANG XIHONG;CHENJ IAN;LIU JIARUI;GAO WENYU;ZHU PEIRAN Department of Technical Physics. Peking University Institute of Physics, Academic Sinica, Beijing

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The ion beam induced atomic mixing and interface reaction between a metalthin film (Ni, Nb, Mo, Ti, Cu) and its silicon substrate is investigated by RBSfor 300 keV Xe~(2+) ions, dose with 5×10~(15) cm~(-2) and an implantation temperaturefrom LNT to 400℃ Many Crystal silicide phases including one phase or two pha-ses are formed. The phase growth is layer by layer. The results are discussed interms of chemical driving force and radiation enhanced diffusion effect.

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300 KeV Xe~(2+) ION BEAM INDUCED REACTION AT THE INTERFACE OF METAL AND SILICON

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