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LI DONGHONG;LI YUEXIN;ZHU SHENGYUN China Institute of Atomic Energy, P. O. Box 275, Beijing. TDPAC STUDY ON ANNEALING BEHAVIOR OF In IN Si AFTER RECOIL IMPLANTATION[J]. Atomic Energy Science and Technology, 1991, 25(3): 30-30. DOI: 10.7538/yzk.1991.25.03.0030
Citation: LI DONGHONG;LI YUEXIN;ZHU SHENGYUN China Institute of Atomic Energy, P. O. Box 275, Beijing. TDPAC STUDY ON ANNEALING BEHAVIOR OF In IN Si AFTER RECOIL IMPLANTATION[J]. Atomic Energy Science and Technology, 1991, 25(3): 30-30. DOI: 10.7538/yzk.1991.25.03.0030
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TDPAC STUDY ON ANNEALING BEHAVIOR OF In IN Si AFTER RECOIL IMPLANTATION

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    • Abstract
  • Si wafer (N-type, P-doped, 1kΩ.cm) is implanted with ~(111)In by nuclearreaction recoils. Thermal annealing behavior of In in Si is studied by the timedifferential perturbed angular correlation technique. It is found that after 798℃annealing 55% of the In atoms occupy substitutional lattice sites in Si with theremainder in perturbed sites.
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