DING HONGLIN China Institute of Atomic Energy, P. O. Box 275, Beijing, 102413. FABRICATION AND CHARACTERISTICS OF LARGE Si(Li) DETECTOR[J]. Atomic Energy Science and Technology, 1993, 27(2): 178-178. DOI: 10.7538/yzk.1993.27.02.0178
Citation:
DING HONGLIN China Institute of Atomic Energy, P. O. Box 275, Beijing, 102413. FABRICATION AND CHARACTERISTICS OF LARGE Si(Li) DETECTOR[J]. Atomic Energy Science and Technology, 1993, 27(2): 178-178. DOI: 10.7538/yzk.1993.27.02.0178
DING HONGLIN China Institute of Atomic Energy, P. O. Box 275, Beijing, 102413. FABRICATION AND CHARACTERISTICS OF LARGE Si(Li) DETECTOR[J]. Atomic Energy Science and Technology, 1993, 27(2): 178-178. DOI: 10.7538/yzk.1993.27.02.0178
Citation:
DING HONGLIN China Institute of Atomic Energy, P. O. Box 275, Beijing, 102413. FABRICATION AND CHARACTERISTICS OF LARGE Si(Li) DETECTOR[J]. Atomic Energy Science and Technology, 1993, 27(2): 178-178. DOI: 10.7538/yzk.1993.27.02.0178
FABRICATION AND CHARACTERISTICS OF LARGE Si(Li) DETECTOR
The paper describes the fabrication of large area Si(Li) detector and its characteristics. The cha-racteristics of detector are as follows: the active area is 123.6 cm~2, and the sensitive depth 2 mm, theleakage current is less than 20μA under the condition of bias voltage 300 V and room temperature. Theenergy resolution of detector (FWHM) is 77.67 keV for ~(241)Am α particle.