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DING HONGLIN China Institute of Atomic Energy, P. O. Box 275--27, Beijing, 102413. FABRICATION AND CHARACTERISTIC OF HIGH RESOLUTION MESH TYPE Au-Si SURFACE BARRIER DETECTOR[J]. Atomic Energy Science and Technology, 1993, 27(3): 269-269. DOI: 10.7538/yzk.1993.27.03.0269
Citation: DING HONGLIN China Institute of Atomic Energy, P. O. Box 275--27, Beijing, 102413. FABRICATION AND CHARACTERISTIC OF HIGH RESOLUTION MESH TYPE Au-Si SURFACE BARRIER DETECTOR[J]. Atomic Energy Science and Technology, 1993, 27(3): 269-269. DOI: 10.7538/yzk.1993.27.03.0269
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FABRICATION AND CHARACTERISTIC OF HIGH RESOLUTION MESH TYPE Au-Si SURFACE BARRIER DETECTOR

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  • The paper describes the fabrication technique and the performance of Au--Si surface barrier detectorwhich is sensitive to ultraviolet light and has high energy resolution. The active area of the Au--Si sur-face is 12. 56 cm~2. Thickness of gold mesh electrods are 195×10~(-10)m. The energy resolution is 55--80 keV for 5. 486 MeV α particle from ~(241)Am at room temperature in low vacuum.
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