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LI DAQING;GUO ZHAOQIAO China Institute of Atomic Energy, P. O. Box 275, Beijing, 102413. TEMPERATURE PROPERTIES STUDY OF THE PLANAR PROCESS Si DETECTOR[J]. Atomic Energy Science and Technology, 1993, 27(6): 553-553. DOI: 10.7538/yzk.1993.27.06.0553
Citation: LI DAQING;GUO ZHAOQIAO China Institute of Atomic Energy, P. O. Box 275, Beijing, 102413. TEMPERATURE PROPERTIES STUDY OF THE PLANAR PROCESS Si DETECTOR[J]. Atomic Energy Science and Technology, 1993, 27(6): 553-553. DOI: 10.7538/yzk.1993.27.06.0553
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TEMPERATURE PROPERTIES STUDY OF THE PLANAR PROCESS Si DETECTOR

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  • The planar process Si detector is a kind of new type charged particles detector with fineproperties, it is possibly made X-ray detector suitable to the practical applications. In order to re-search into this possibility, detector temperature properties must be studied. In the paper experi-ment apparatus is introduced, temperature properties of the planar process Si detector are moresystematically measured, the temperature range is from -20℃ to +50℃. The results are pre-liminarily analyzed.
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