Wu Guangming Wang Jue Shen Jun Yang Tianhe Lai Zhenquan Zhang Huilin Zhang Qinyuan (Pohl Institute of Solid State Physics, Tongji University, Shanghai, 200092) Fan Bin Zhou Dongping Zhang Fengshan (Shanghai Institute of Technical Physics, Chinese Academy of Sciences,200083). STRUCTURAL CONTROL OF SILICA THIN FILMS WITH LOW REFRACTIVE INDEX DERIVED FROM SOL GEL PROCESS[J]. Atomic Energy Science and Technology, 1999, 33(4): 332-332. DOI: 10.7538/yzk.1999.33.04.0332
Citation: Wu Guangming Wang Jue Shen Jun Yang Tianhe Lai Zhenquan Zhang Huilin Zhang Qinyuan (Pohl Institute of Solid State Physics, Tongji University, Shanghai, 200092) Fan Bin Zhou Dongping Zhang Fengshan (Shanghai Institute of Technical Physics, Chinese Academy of Sciences,200083). STRUCTURAL CONTROL OF SILICA THIN FILMS WITH LOW REFRACTIVE INDEX DERIVED FROM SOL GEL PROCESS[J]. Atomic Energy Science and Technology, 1999, 33(4): 332-332. DOI: 10.7538/yzk.1999.33.04.0332
  • A new method of structural control of low refraction index silica thin films is reported. Based on TEOS system and sol gel process, together with organic dopant and silane coupling agent, the microstructure of SiO 2 particles in the sol is exactly controlled. Then silica thin films with 1.15~1.18 of refractive index are obtained by use of dip coating. The films are characterized by ellipsometer, spectrophotometer,SEM and TEM, respectively. The experimental results show that adjusting pH value of the sol can effectively control and keep the microstructure of SiO 2 sol, and the doping silane coupling agent makes particles of SiO 2 sol grow up.
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    1  Floch H G, Belleville P F. A Scratchresistant Singlelayer Antireflective Coating by a Low Tem perature Solgel Route. S P I E Proc 1758.[s.1.] :[s.n.], 1992: 1352  Shanbhogue H G, Nagendra C L, Annapura M N, et al. M ultilayer Antireflection Coatings for the Visibleand Nearinfrared Region. Applied Optics, 1997,36(25):63393  Neum an G A. Antireflective Coatings by A P C V D Using Graded Index Layers. Journal of Noncrystalline Solids, 1997,218:92

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