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Xu Guoji (China Institute of Atomic Energy, P.O.Box 275 35, Beijing, 102413) Wei Yongqin (Shanghai Institute of Nuclear Research, Chinese Academy of Sciences, Shanghai, 200018). THE PREPARATION OF BORON TARGETS[J]. Atomic Energy Science and Technology, 1999, 33(4): 357-357. DOI: 10.7538/yzk.1999.33.04.0357
Citation: Xu Guoji (China Institute of Atomic Energy, P.O.Box 275 35, Beijing, 102413) Wei Yongqin (Shanghai Institute of Nuclear Research, Chinese Academy of Sciences, Shanghai, 200018). THE PREPARATION OF BORON TARGETS[J]. Atomic Energy Science and Technology, 1999, 33(4): 357-357. DOI: 10.7538/yzk.1999.33.04.0357
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  • The methods of producing boron films on backings by centrifugal precipitation,electrospraying and electricity vibration are presented. Techniques for preparing self supporting B targets between 0 045 and 0 45 mg/cm 2 from isotopic boron by electron bombardment or focused ion beam sputtering are discussed. Microscope slides coated with betaine or Ni plates are used as substrates from which strong B foils with little residual stress are floated. A spectrophotometer has been used to measure the mass thickness of B targets prepared by electron bombardment.
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