TANG Ben qi, WANG Yian ping, GENG Bin, CHEN Xiao hua(Northwest Institute of Nuclear Technology, Xi’an 710024, China). PSPICE Simulation for Single Event Gate Rupture of Power MOSFET[J]. Atomic Energy Science and Technology, 2000, 34(2): 161-161. DOI: 10.7538/yzk.2000.34.02.0161
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Citation:
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TANG Ben qi, WANG Yian ping, GENG Bin, CHEN Xiao hua(Northwest Institute of Nuclear Technology, Xi’an 710024, China). PSPICE Simulation for Single Event Gate Rupture of Power MOSFET[J]. Atomic Energy Science and Technology, 2000, 34(2): 161-161. DOI: 10.7538/yzk.2000.34.02.0161
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TANG Ben qi, WANG Yian ping, GENG Bin, CHEN Xiao hua(Northwest Institute of Nuclear Technology, Xi’an 710024, China). PSPICE Simulation for Single Event Gate Rupture of Power MOSFET[J]. Atomic Energy Science and Technology, 2000, 34(2): 161-161. DOI: 10.7538/yzk.2000.34.02.0161
|
Citation:
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TANG Ben qi, WANG Yian ping, GENG Bin, CHEN Xiao hua(Northwest Institute of Nuclear Technology, Xi’an 710024, China). PSPICE Simulation for Single Event Gate Rupture of Power MOSFET[J]. Atomic Energy Science and Technology, 2000, 34(2): 161-161. DOI: 10.7538/yzk.2000.34.02.0161
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