Research of Radiation Effects on Typical CMOS Devices 54HC04 for Space Application by Using the ~(60)Co Source

HE Bao ping, ZHANG Zheng xuan, GUO Hong xia, JIANG Jing he (Northwest Institute of Nuclear Technology, Xi'an 710024, China)

doi:10.7538/yzk.2000.34.04.0334

HE Bao ping, ZHANG Zheng xuan, GUO Hong xia, JIANG Jing he (Northwest Institute of Nuclear Technology, Xi'an 710024, China). Research of Radiation Effects on Typical CMOS Devices 54HC04 for Space Application by Using the ~(60)Co Source[J]. Atomic Energy Science and Technology, 2000, 34(4): 334-334. DOI: 10.7538/yzk.2000.34.04.0334

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Research of Radiation Effects on Typical CMOS Devices 54HC04 for Space Application by Using the ~(60)Co Source

HE Bao ping, ZHANG Zheng xuan, GUO Hong xia, JIANG Jing he (Northwest Institute of Nuclear Technology, Xi'an 710024, China)

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In this study the experiment results for nonhardening and hardening 54HC04 devices at low dose rate under two irradiation biases by using the 60 Co source are presented. The main purpose is to determine the radiation total dose dependence of current transfer characteristic, threshold voltage, radiation induced leakage current and transfer voltage.

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Research of Radiation Effects on Typical CMOS Devices 54HC04 for Space Application by Using the ~(60)Co Source

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