ZHANG Zheng xuan 1, LUO Jin sheng 2, YUAN Ren feng 1, ZHANG Ting qing 3, JIANG Jing he 1 (1 Northwest Institute of Nuclear Technology, Xi'an 710024, China; 2 Microelectronic Institute, Xi'an Jiaotong University, Xi'an 710049, China; 3 Microelectronic Institute, Xi'an Electron Scie. Measurement of Radiation-induced Interface Traps on BF_2~+ Implanted Si-gate PMOSFET[J]. Atomic Energy Science and Technology, 2000, 34(4): 350-350. DOI: 10.7538/yzk.2000.34.04.0350
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Citation:
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ZHANG Zheng xuan 1, LUO Jin sheng 2, YUAN Ren feng 1, ZHANG Ting qing 3, JIANG Jing he 1 (1 Northwest Institute of Nuclear Technology, Xi'an 710024, China; 2 Microelectronic Institute, Xi'an Jiaotong University, Xi'an 710049, China; 3 Microelectronic Institute, Xi'an Electron Scie. Measurement of Radiation-induced Interface Traps on BF_2~+ Implanted Si-gate PMOSFET[J]. Atomic Energy Science and Technology, 2000, 34(4): 350-350. DOI: 10.7538/yzk.2000.34.04.0350
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ZHANG Zheng xuan 1, LUO Jin sheng 2, YUAN Ren feng 1, ZHANG Ting qing 3, JIANG Jing he 1 (1 Northwest Institute of Nuclear Technology, Xi'an 710024, China; 2 Microelectronic Institute, Xi'an Jiaotong University, Xi'an 710049, China; 3 Microelectronic Institute, Xi'an Electron Scie. Measurement of Radiation-induced Interface Traps on BF_2~+ Implanted Si-gate PMOSFET[J]. Atomic Energy Science and Technology, 2000, 34(4): 350-350. DOI: 10.7538/yzk.2000.34.04.0350
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Citation:
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ZHANG Zheng xuan 1, LUO Jin sheng 2, YUAN Ren feng 1, ZHANG Ting qing 3, JIANG Jing he 1 (1 Northwest Institute of Nuclear Technology, Xi'an 710024, China; 2 Microelectronic Institute, Xi'an Jiaotong University, Xi'an 710049, China; 3 Microelectronic Institute, Xi'an Electron Scie. Measurement of Radiation-induced Interface Traps on BF_2~+ Implanted Si-gate PMOSFET[J]. Atomic Energy Science and Technology, 2000, 34(4): 350-350. DOI: 10.7538/yzk.2000.34.04.0350
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