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LIAO Zhi jun, LIN Li bin, ZOU Rui(Sichuan University, Chengdu 610064, China). Influence of Defects Produced by Proton Irradiation on Switching Characteristic of Thyristors[J]. Atomic Energy Science and Technology, 2000, 34(S1): 37-37. DOI: 10.7538/yzk.2000.34.S1.0037
Citation: LIAO Zhi jun, LIN Li bin, ZOU Rui(Sichuan University, Chengdu 610064, China). Influence of Defects Produced by Proton Irradiation on Switching Characteristic of Thyristors[J]. Atomic Energy Science and Technology, 2000, 34(S1): 37-37. DOI: 10.7538/yzk.2000.34.S1.0037
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Influence of Defects Produced by Proton Irradiation on Switching Characteristic of Thyristors

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  • The different defects in proton irradiated silicon is analyzed. The switching properties of thyristors are improved by sigle and dual energy proton irradiation and the IR spectrum studies show that the vacancy pairs cause the rises of V TM (voltage drop in on state).
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