YAO Shu de 1,2, MENG Zhao xiang 1, YU Peng peng 1, ZHANG Yong 1, ZHOU Sheng qiang 1, LU Yi hong 1, ZHANG Guo yi 3, TONG Yu zhen 3 (1 Department of Technical Physics, Peking University, Beijing 100871, China; 2 Institutej of Heavy Ion physics, Peking University, Beijing 100. Analysis and Modification of New Photoelectricity Material GaN by Ion Beam[J]. Atomic Energy Science and Technology, 2000, 34(S1): 41-41. DOI: 10.7538/yzk.2000.34.S1.0041
|
Citation:
|
YAO Shu de 1,2, MENG Zhao xiang 1, YU Peng peng 1, ZHANG Yong 1, ZHOU Sheng qiang 1, LU Yi hong 1, ZHANG Guo yi 3, TONG Yu zhen 3 (1 Department of Technical Physics, Peking University, Beijing 100871, China; 2 Institutej of Heavy Ion physics, Peking University, Beijing 100. Analysis and Modification of New Photoelectricity Material GaN by Ion Beam[J]. Atomic Energy Science and Technology, 2000, 34(S1): 41-41. DOI: 10.7538/yzk.2000.34.S1.0041
|
YAO Shu de 1,2, MENG Zhao xiang 1, YU Peng peng 1, ZHANG Yong 1, ZHOU Sheng qiang 1, LU Yi hong 1, ZHANG Guo yi 3, TONG Yu zhen 3 (1 Department of Technical Physics, Peking University, Beijing 100871, China; 2 Institutej of Heavy Ion physics, Peking University, Beijing 100. Analysis and Modification of New Photoelectricity Material GaN by Ion Beam[J]. Atomic Energy Science and Technology, 2000, 34(S1): 41-41. DOI: 10.7538/yzk.2000.34.S1.0041
|
Citation:
|
YAO Shu de 1,2, MENG Zhao xiang 1, YU Peng peng 1, ZHANG Yong 1, ZHOU Sheng qiang 1, LU Yi hong 1, ZHANG Guo yi 3, TONG Yu zhen 3 (1 Department of Technical Physics, Peking University, Beijing 100871, China; 2 Institutej of Heavy Ion physics, Peking University, Beijing 100. Analysis and Modification of New Photoelectricity Material GaN by Ion Beam[J]. Atomic Energy Science and Technology, 2000, 34(S1): 41-41. DOI: 10.7538/yzk.2000.34.S1.0041
|
DownLoad: