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WANG Rong 1, XU Yong-jun 1, ZHU Jia-zheng 1, ZHU Sheng-yun 1, T.Iwata 2,_K.Matsuta 3, M.Fukuda 3, M.Mihara 3, T.Minamisono 3__(1. China Institute of Atomic Energy, P.O. Box 275-50, Beijing 102413, China;_2. Advanced Science Research Center, JAERI, Japan;_3. Department of Physics, Osaka Uni. Study on Thermal Annealing Induced Voids in α-Al_2O_3 Irradiated by 85 MeV ~(19)F Ion[J]. Atomic Energy Science and Technology, 2001, 35(4): 363-363. DOI: 10.7538/yzk.2001.35.04.0363
Citation: WANG Rong 1, XU Yong-jun 1, ZHU Jia-zheng 1, ZHU Sheng-yun 1, T.Iwata 2,_K.Matsuta 3, M.Fukuda 3, M.Mihara 3, T.Minamisono 3__(1. China Institute of Atomic Energy, P.O. Box 275-50, Beijing 102413, China;_2. Advanced Science Research Center, JAERI, Japan;_3. Department of Physics, Osaka Uni. Study on Thermal Annealing Induced Voids in α-Al_2O_3 Irradiated by 85 MeV ~(19)F Ion[J]. Atomic Energy Science and Technology, 2001, 35(4): 363-363. DOI: 10.7538/yzk.2001.35.04.0363
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  • Thermal annealing induced voids in α-Al 2O 3 irradiated by 85 MeV 19 F ion to the fluence of 5.28×10 16 cm -2 are studied from room temperature to 1 050 ℃ by the positron annihilation lifetime technique for the first time. The experimental results show that the voids start to appear at 450 ℃, from 550 ℃ to 750 ℃ the void radius is 0.37 nm, while the number of voids increases with the increasing of thermal annealing temperature, afterward, the void radius increases rapidly and reaches 1.02 nm at the annealing temperature of 1 050 ℃._
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