ZHANG Qing xiang 1, YANG Zhao ming 1, LI Zhi chang 2, LI Shu yuan 2, JIANG Hua 2 (1 Lanzhou Institute of Physics, Lanzhou 730000, China; 2 China Institute of Atomic Energy, P. O. Box 275 10 Beijing 102413, China). Experimental Investigation of Single-word Multiple Upsets(SMU) in Commercial Static RAMs[J]. Atomic Energy Science and Technology, 2001, 35(6): 485-485. DOI: 10.7538/yzk.2001.35.06.0485
Citation: ZHANG Qing xiang 1, YANG Zhao ming 1, LI Zhi chang 2, LI Shu yuan 2, JIANG Hua 2 (1 Lanzhou Institute of Physics, Lanzhou 730000, China; 2 China Institute of Atomic Energy, P. O. Box 275 10 Beijing 102413, China). Experimental Investigation of Single-word Multiple Upsets(SMU) in Commercial Static RAMs[J]. Atomic Energy Science and Technology, 2001, 35(6): 485-485. DOI: 10.7538/yzk.2001.35.06.0485
  • Single word multiple upsets(SMU) are studied in two kinds of CMOS static RAM by F, Cl and Br ions from HI 13 tandem accelerator. To distinguish SMU from all single event upsets (SEUs) detected, high resolution test system using network technique has been developed. SMU σ LET curves of different test patterns 5A, FF and 00 are presented and the effects of LET on the results are analyzed. Experimental results have important implications on space upset rate prediction.
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