ZHOU Bin 1, HUANG Yao dong 1, LI Xin 2, SUN Qi 1, CHE Lu feng 2, SHEN Jun 1, WU Guang ming 1, TANG Wei xing 1, XIONG Bin 2, WANG Yue lin 2 (1 Pohl Institute of Solid State Physics, Tongji University, Shanghai 200092, China; 2 State Key Laboratory of Transducer Technology, Shang. Measurement on Concentration of Boron Impurity in Thin Silicon Foils Prepared by Heavy-doped Self-stop Etching Process[J]. Atomic Energy Science and Technology, 2002, 36(Z1): 364-364. DOI: 10.7538/yzk.2002.36.z1.0364
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Citation:
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ZHOU Bin 1, HUANG Yao dong 1, LI Xin 2, SUN Qi 1, CHE Lu feng 2, SHEN Jun 1, WU Guang ming 1, TANG Wei xing 1, XIONG Bin 2, WANG Yue lin 2 (1 Pohl Institute of Solid State Physics, Tongji University, Shanghai 200092, China; 2 State Key Laboratory of Transducer Technology, Shang. Measurement on Concentration of Boron Impurity in Thin Silicon Foils Prepared by Heavy-doped Self-stop Etching Process[J]. Atomic Energy Science and Technology, 2002, 36(Z1): 364-364. DOI: 10.7538/yzk.2002.36.z1.0364
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ZHOU Bin 1, HUANG Yao dong 1, LI Xin 2, SUN Qi 1, CHE Lu feng 2, SHEN Jun 1, WU Guang ming 1, TANG Wei xing 1, XIONG Bin 2, WANG Yue lin 2 (1 Pohl Institute of Solid State Physics, Tongji University, Shanghai 200092, China; 2 State Key Laboratory of Transducer Technology, Shang. Measurement on Concentration of Boron Impurity in Thin Silicon Foils Prepared by Heavy-doped Self-stop Etching Process[J]. Atomic Energy Science and Technology, 2002, 36(Z1): 364-364. DOI: 10.7538/yzk.2002.36.z1.0364
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Citation:
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ZHOU Bin 1, HUANG Yao dong 1, LI Xin 2, SUN Qi 1, CHE Lu feng 2, SHEN Jun 1, WU Guang ming 1, TANG Wei xing 1, XIONG Bin 2, WANG Yue lin 2 (1 Pohl Institute of Solid State Physics, Tongji University, Shanghai 200092, China; 2 State Key Laboratory of Transducer Technology, Shang. Measurement on Concentration of Boron Impurity in Thin Silicon Foils Prepared by Heavy-doped Self-stop Etching Process[J]. Atomic Energy Science and Technology, 2002, 36(Z1): 364-364. DOI: 10.7538/yzk.2002.36.z1.0364
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