RBS Study on GaN Implated With He~+, N~+

ZHOU Sheng-qiang1, YAO Shu-de<sup>1,2</sup>, JIAO Sheng-xian1, SUN Chang-chun1, SUN Chang1(1. Department of Technical Physics, Peking University, Beijing 100871, China; 2. Institute of Heavy Ion Physics, Peking University, Beijing 100871, China)

doi:10.7538/yzk.2003.37.01.0028

ZHOU Sheng-qiang1, YAO Shu-de1,2, JIAO Sheng-xian1, SUN Chang-chun1, SUN Chang1(1. Department of Technical Physics, Peking University, Beijing 100871, China; 2. Institute of Heavy Ion Physics, Peking University, Beijing 100871, China). RBS Study on GaN Implated With He~+, N~+[J]. Atomic Energy Science and Technology, 2003, 37(1): 28-28. DOI: 10.7538/yzk.2003.37.01.0028

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RBS Study on GaN Implated With He~+, N~+

ZHOU Sheng-qiang1, YAO Shu-de^1,2, JIAO Sheng-xian1, SUN Chang-chun1, SUN Chang1(1. Department of Technical Physics, Peking University, Beijing 100871, China; 2. Institute of Heavy Ion Physics, Peking University, Beijing 100871, China)

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The structure and crystal quality of GaN are studied using Rutherford backscattering spectrometry (RBS) and channeling. The samples are grown on sapphire substrate by metalorganic vaporphase epitaxy. The He+, N+ implantation with different ion energy and postimplantation annealing are investigated. 7～8 orders increasing of resistivity is observed by Hall measurements after specific temperature annealing, and the optimized annealing temperature is about 200 and 400 ℃ for He+ and N+, respectively. After 600～700 ℃ annealing, the resistivity is still very high, and radioation damages is found by RBS/channeling.

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RBS Study on GaN Implated With He~+, N~+

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