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XIANG Wei1,2, ZHAO Wei-jing2, YAN Sha2, HAN Bao-xi2 (1.Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang 621900, China; 2.Institute of Heavy Ion Physics, Peking University, Beijing 100871, China). Influences of Magnetic Fields on Characteristics of a Magnetically Insulated Io n Diode[J]. Atomic Energy Science and Technology, 2003, 37(3): 203-203. DOI: 10.7538/yzk.2003.37.03.0203
Citation: XIANG Wei1,2, ZHAO Wei-jing2, YAN Sha2, HAN Bao-xi2 (1.Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang 621900, China; 2.Institute of Heavy Ion Physics, Peking University, Beijing 100871, China). Influences of Magnetic Fields on Characteristics of a Magnetically Insulated Io n Diode[J]. Atomic Energy Science and Technology, 2003, 37(3): 203-203. DOI: 10.7538/yzk.2003.37.03.0203
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    • Abstract
  • Based on plasma explosive emission model, the self c onsistent and 21/2 dimensional electromagnetic particleincell code is employed to simulate the characteristics of a magnetically insulated ion dio de for intense pulsed ion beams. The trajectories of electrons and protons in th e anodecathode gap of the diode, the timedependence of the diode current I d, the electron loss current density to anode je and the extracted pro ton current density jp are presented at externally insulating magnetic fie ld in the range of 2Bcrit and the maxiumum diode voltage of 300 kV. Th e effects of the magnetic field on the virtual cathode, the diode impedance as w ell as the overall ion current efficiency of the diode are discussed.
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