Ion Collection Simulation by j×B Scheme With Collision and Sputtering

The paper focuses on the ion collection simulation by j×B scheme with collision and sputtering. The effects of the collector electricity parameters on the collection time, collision and sputtering characteristics are studied. The collecting rate is increased with increasing of the current js and djs/dt, descended with increasing of the plasma density. The influence of the space between collectors is complex, augmenting the space and the collimated empty, improving collecting rate. 