LI Zhi-chang~1, LI Shu-yuan~1, LIU Jian-cheng~1, CAO Zhou~2, YANG Shi-yu~2 (1.China Institute of Atomic Energy, P.O.Box 275-10, Beijing 102413, China; 2.Airspace Group Corporation of China, 5th Institute, P. O. Box 94, Lanzhou 730000, China). Measurements of the Cross Sections of the Single Event Burnout(SEB) for the Power MOSFET[J]. Atomic Energy Science and Technology, 2004, 38(5): 395-395. DOI: 10.7538/yzk.2004.38.05.0395
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Citation:
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LI Zhi-chang~1, LI Shu-yuan~1, LIU Jian-cheng~1, CAO Zhou~2, YANG Shi-yu~2 (1.China Institute of Atomic Energy, P.O.Box 275-10, Beijing 102413, China; 2.Airspace Group Corporation of China, 5th Institute, P. O. Box 94, Lanzhou 730000, China). Measurements of the Cross Sections of the Single Event Burnout(SEB) for the Power MOSFET[J]. Atomic Energy Science and Technology, 2004, 38(5): 395-395. DOI: 10.7538/yzk.2004.38.05.0395
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LI Zhi-chang~1, LI Shu-yuan~1, LIU Jian-cheng~1, CAO Zhou~2, YANG Shi-yu~2 (1.China Institute of Atomic Energy, P.O.Box 275-10, Beijing 102413, China; 2.Airspace Group Corporation of China, 5th Institute, P. O. Box 94, Lanzhou 730000, China). Measurements of the Cross Sections of the Single Event Burnout(SEB) for the Power MOSFET[J]. Atomic Energy Science and Technology, 2004, 38(5): 395-395. DOI: 10.7538/yzk.2004.38.05.0395
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Citation:
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LI Zhi-chang~1, LI Shu-yuan~1, LIU Jian-cheng~1, CAO Zhou~2, YANG Shi-yu~2 (1.China Institute of Atomic Energy, P.O.Box 275-10, Beijing 102413, China; 2.Airspace Group Corporation of China, 5th Institute, P. O. Box 94, Lanzhou 730000, China). Measurements of the Cross Sections of the Single Event Burnout(SEB) for the Power MOSFET[J]. Atomic Energy Science and Technology, 2004, 38(5): 395-395. DOI: 10.7538/yzk.2004.38.05.0395
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