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LIU Jian-cheng1, LI Zhi-chang1, LI Shu-yuan1, WANG Wen-yan2, TANG Min2(1. China Institute of Atomic Energy, P.O.Box 275-10, Beijing 102413, China;2. Airspace Science and Technology Group Corporation of China, 5(th) Institute, Beijing 100029,China). The Test System for the Study on Irradiation Effects Induced by Heavy Ions[J]. Atomic Energy Science and Technology, 2004, 38(S1): 227-227. DOI: 10.7538/yzk.2004.38.S1.0227
Citation: LIU Jian-cheng1, LI Zhi-chang1, LI Shu-yuan1, WANG Wen-yan2, TANG Min2(1. China Institute of Atomic Energy, P.O.Box 275-10, Beijing 102413, China;2. Airspace Science and Technology Group Corporation of China, 5(th) Institute, Beijing 100029,China). The Test System for the Study on Irradiation Effects Induced by Heavy Ions[J]. Atomic Energy Science and Technology, 2004, 38(S1): 227-227. DOI: 10.7538/yzk.2004.38.S1.0227
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  • A test system was developed in order to study the single event effects (SEE) of the static RAM circuits and programmable peripheral interface circuits. The characteristics of the system are the good man-machine interaction, easy and visual operation. Therefore the reliable control and the data acquisition can be performed. This system is successfully applied to the investigation of SEE induced by the heavy ions produced by HI-13 tandem accelerator, such as the experimental studies of SEE for the HM1-65642 (SRAM 8K×8bit) and CMOS programmable peripheral interface ID82C55A. The SEE measurements for these two kinds of devices with 5 types of ions,~(16)O,~(35)Cl,~(56)Fe,~(79)Br, and~(127)I are carried out.
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