Study on Numerical Analysis and Experiment Simulation Approaches for Radiation Effects of Typical Optoelectronic Devices

TANG Ben-qi<sup>1,2</sup>, ZHANG Yong~1, XIAO Zhi-gang~1, HUANG Fang~1, WANG Zu-jun~1, HUANG Shao-yan~1, MAO Yong-ze~2, WANG Feng~2 (1.Northwest Institute of Nuclear Technology, Xi’an 710024, China; 2.The 2nd Institute of Chemical Defense Academy, Beijing 102205, China)

doi:10.7538/yzk.2005.39.02.0183

TANG Ben-qi1,2, ZHANG Yong~1, XIAO Zhi-gang~1, HUANG Fang~1, WANG Zu-jun~1, HUANG Shao-yan~1, MAO Yong-ze~2, WANG Feng~2 (1.Northwest Institute of Nuclear Technology, Xi’an 710024, China; 2.The 2nd Institute of Chemical Defense Academy, Beijing 102205, China). Study on Numerical Analysis and Experiment Simulation Approaches for Radiation Effects of Typical Optoelectronic Devices[J]. Atomic Energy Science and Technology, 2005, 39(2): 183-183. DOI: 10.7538/yzk.2005.39.02.0183

Citation:

Study on Numerical Analysis and Experiment Simulation Approaches for Radiation Effects of Typical Optoelectronic Devices

TANG Ben-qi^1,2, ZHANG Yong~1, XIAO Zhi-gang~1, HUANG Fang~1, WANG Zu-jun~1, HUANG Shao-yan~1, MAO Yong-ze~2, WANG Feng~2 (1.Northwest Institute of Nuclear Technology, Xi’an 710024, China; 2.The 2nd Institute of Chemical Defense Academy, Beijing 102205, China)

Graphical Abstract

Graphical Abstract

Abstract

Abstract

The numerical analysis and experimental simulation approaches were studied for radiation effects of typical optoelectronic devices, such as Si solar cells and CCDs. At first, the damage mechanism of ionization and displacement effects on solar cells and CCDs was analyzed. Secondly, the output characteristics of Si solar cell by 1 MeV electron radiation was calculated with the two-dimensional device simulation software MEDICI, such as the short circuit current I_(sc), the open-circuit voltage V_(oc) and the maximum power P_(max). The simulation results are in good agreement with the experimental values in a certain range of electron fluence. Meanwhile, the ionization radiation experiment was carried out on the commercial linear CCD by ~(60)Co γ source with our self-(designed) test system, and some valuable results of dark voltage and saturation voltage (varied) with total dose for TCD132D were gotten.

FullText(HTML)

References (5)

Cited By

Turn off MathJax

Article Contents

Study on Numerical Analysis and Experiment Simulation Approaches for Radiation Effects of Typical Optoelectronic Devices

Graphical Abstract

Abstract

Catalog

Export File

Citation

Format

Content