Theoretic Research on Time-Dependent Radiation Response of MOSFET

Response function is utilized to fit experimental data for several important physical processes of timedependent radiation response of MOSFET, including the shortterm recovery due to hole transport, the long-term recovery due to trapped hole anneal and the long-term buildup of interface traps. The fitting procedure and results are presented. It is discussed in detail how the spatial distribution difference of trapped holes affects annealing response and the varying temperature affects buildup of interface state. The agreement is excellent, and this function is suitable to analyse MOS radiation effect.