Helium-Charged Aluminium Films Deposited by Direct Current Magnetron Sputtering

Helium-charged Al films are prepared by direct current (DC) magnetron sputtering with a He/Ar mixture. C-elastic recoil detection analysis （C-ERDA） spectrum shows that the concentration of helium atoms in He-charged Al films is about 7%. The trapped amount of helium depends on the relative helium content in sputtering gas, applied bias and substrate temperature. The crystal structure is also investigated by XRD. It is proved by thermal desorption spectrometry (TDS) that helium atoms in Al films are stable.