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HE Bao-ping, ZHOU He-qin, GUO Hong-xia, HE Chao-hui, ZHOU Hui, LUO Yin-hong, ZHANG Feng-qi. Theoretic Simulation for CMOS Device on Total Dose Radiation Response[J]. Atomic Energy Science and Technology, 2006, 40(4): 486-489. DOI: 10.7538/yzk.2006.40.04.0486
Citation: HE Bao-ping, ZHOU He-qin, GUO Hong-xia, HE Chao-hui, ZHOU Hui, LUO Yin-hong, ZHANG Feng-qi. Theoretic Simulation for CMOS Device on Total Dose Radiation Response[J]. Atomic Energy Science and Technology, 2006, 40(4): 486-489. DOI: 10.7538/yzk.2006.40.04.0486
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Theoretic Simulation for CMOS Device on Total Dose Radiation Response

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  • Total dose effect is simulated for C4007B, CC4007RH and CC4011 devices at different absorbed dose rate by using linear system theory. When irradiation response and dose are linear, total dose radiation and postirradiation annealing at room temperature are determined for one random by choosing absorbed dose rate, and total dose effect at other absorbed dose rate can be predicted by using linear system theory. The simulating results agree with the experimental results at different absorbed dose rate.
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