CHEN Wei. Quality Control for Silicon Neutron Doping in SPRR-300[J]. Atomic Energy Science and Technology, 2006, 40(增刊): 161-163. DOI: 10.7538/yzk.2006.40.suppl.0161
Citation: CHEN Wei. Quality Control for Silicon Neutron Doping in SPRR-300[J]. Atomic Energy Science and Technology, 2006, 40(增刊): 161-163. DOI: 10.7538/yzk.2006.40.suppl.0161

Quality Control for Silicon Neutron Doping in SPRR-300

  • Silicon doping in SPRR-300 was begun in 1980s. There are 6 tubes for silicon irradiation now. Through calculating and monitoring curb of thermal neutron fluence, target resistivity hitting ratio is high than 90%. Through spinning the silicon sample during irradiation by a rotate electric motor, uneven proportion of radial doping is controlled below 5%. Through neutron fluence rate smooth area using and silicon sample position adjusting, uneven proportion of axial doping is also controlled below 5%.
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