Determination of Activation Energy Distribution During Thermal Annealing in Post-Irradiation CMOS Devices

The annealing characteristics of isothermal and isochronal for post-irradiation CMOS transistor are discussed. The relations about radiation sensitive parameters with isothermal annealing time and isochronal annealing temperature are given. The activation energy distribution during 25, 100 ℃ isothermal annealing and 25-250 ℃ isochronal annealing for post-irradiation CMOS devices are calculated by annealing model. According to the result, the range of activation energy for isothermal annealing at 25, 100 ℃ is from 0.65 eV to 0.76 eV and from 0.75 eV to 0.95eV respectively. The range of activation energy for isoch