Experiment Research on Single Event Burnout of Power MOSFET Devices With ²⁵²Cf Source

The method in simulation of radiation effect test by ²⁵²Cf source was introduced, and the single event burnout experiment was carried out. The research result indicates that power MOSFET devices should be operated at the lowest voltage range under the radiation environment in the space, and adding a resister to confine the current in the circuit is an effective reinforce to avoid single event burnout.