Effect of Eliminating Argon by Heat-Treatment on Hydrogen Resistance of C-SiC Films Deposited by Ion Beam Mixing

C-SiC films were deposited on the surface of stainless steel using ion beam mixing. In order to eliminate argon, some of the samples were heat-treated for 30 min at 400 ℃ before all were irradiated by 5 keV hydrogen ion beam. Scanning electron microscope (SEM) was used to analyze surface microtopology. Secondary ion mass spectrometry (SIMS) was used to analyze the depth distribution of H and Ar and mass spectra of positive species. The effect of eliminating argon by heat-treatment on the surface structure and hydrogen resistance of C-SiC films was studied. It is found that the concentration of hydrogen in stainless steel substrates after eliminated argon by heat-treatment is reduced 80%. This means that the technical of eliminating argon by heat-treatment can effectively improve hydrogen resistance of C-SiC films, which offers the theory proof of technical improvement in practical application.