Preparation of Polycrystalline Silicon Films by Plasma-Enhanced

DENG Wanting; WU Aimin; ZHANG Guangying; QIN Fuwen; DONG Chuang; JIANG Xin

doi:10.7538/yzk.2007.41.suppl2.0436

Atomic Energy Science and Technology > 2007 > 41(增刊2): 436-440. > DOI: 10.7538/yzk.2007.41.suppl2.0436

DENG Wanting, WU Aimin, ZHANG Guangying, QIN Fuwen, DONG Chuang, JIANG Xin. Preparation of Polycrystalline Silicon Films by Plasma-Enhanced[J]. Atomic Energy Science and Technology, 2007, 41(增刊2): 436-440. DOI: 10.7538/yzk.2007.41.suppl2.0436

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Preparation of Polycrystalline Silicon Films by Plasma-Enhanced

1.
State Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Dalian 116024, China
2.
School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China
3.
School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China
4.
Institute of Materials Engineering, Siegen University, Siegen 57076, Germany

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Corresponding author:
WU Aimin
Received Date: November 14, 2007
Revised Date: December 02, 2007

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Abstract

Using SiH4and H2 as source gases, the polycrystalline silicon thin films were prepared on glass by electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD) technique. The effects of the deposition parameters, such as the substrate temperature, the flow ratio of H2 and the microwave power, were investigated by XRD, Raman spectrum and TEM. The results show that most of the poly-Si films have a (220) preferential orientation. While in some cases, (111) preferentially oriented silicon films are obtained. The films with the optimum crystal state can be deposited at substrate temperature of 300 ℃, hydrogen flow ratio of 25 mL/min, and microwave power of 600 W.

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