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XUE Yu-xiong, CAO Zhou, GUO Zu-you, YANG Shi-yu, TIAN Kai. Influence of γ-ray Dose Rate on Total Ionization Dosefor Power MOSFET[J]. Atomic Energy Science and Technology, 2008, 42(5): 470-474. DOI: 10.7538/yzk.2008.42.05.0470
Citation: XUE Yu-xiong, CAO Zhou, GUO Zu-you, YANG Shi-yu, TIAN Kai. Influence of γ-ray Dose Rate on Total Ionization Dosefor Power MOSFET[J]. Atomic Energy Science and Technology, 2008, 42(5): 470-474. DOI: 10.7538/yzk.2008.42.05.0470
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Influence of γ-ray Dose Rate on Total Ionization Dosefor Power MOSFET

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  • Two typical military power MOSFETs, JANTXV 2N6798 and JANTXV 2N7261, were irradiated by 60Co γ-ray at various dose rates. The threshold voltage, breakdown voltage and leakage current characteristic curve vs. irradiation dose were obtained. Test result shows that low dose rate induces device malfunction more easily.
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