Single-Event Burnout of Power MOSFET Devices for Satellite Application

XUE Yu-xiong; TIAN Kai; CAO Zhou; YANG Shi-yu; LIU Gang; CAI Xiao-wu; LU Jiang

doi:10.7538/yzk.2008.42.12.1125

XUE Yu-xiong, TIAN Kai, CAO Zhou, YANG Shi-yu, LIU Gang, CAI Xiao-wu, LU Jiang. Single-Event Burnout of Power MOSFET Devices for Satellite Application[J]. Atomic Energy Science and Technology, 2008, 42(12): 1125-1129. DOI: 10.7538/yzk.2008.42.12.1125

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Single-Event Burnout of Power MOSFET Devices for Satellite Application

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Single-event burnout (SEB) sensitivity was tested for power MOSFET devices, JTMCS081 and JTMCS062, which were made in Institute of Microelectronics, Chinese Academy of Sciences, using californium-252 simulation source. SEB voltage threshold was found for devices under test (DUT). It is helpful for engineers to choose devices used in satellites.

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Single-Event Burnout of Power MOSFET Devices for Satellite Application

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