Experimental Study on Single Event Latchup of Antifuse Field Programmable Gate Array

Single event latchup sensitivity evaluation tests of antifuse A42MX36 field programmable gate array were performed using pulsed laser and 252Cf source single event effect simulation system. The sensitivity parameters such as pulsed laser threshold energy as well as its equivalent heavyion LET and latchup current of device were determined in pulsed laser test. The latchup crosssection was obtained in 252Cf source test. The currentjump phenomena induced by single event dielectric rupture (SEDR) and pseudo single event latchup (pSEL) in test was also discussed and analyzed.