GAO Bo, YU Xue-feng, REN Di-yuan, WANG Yi-yuan, LI Peng-wei, YU Yue. Total Ionizing Dose Effect for Altera SRAM-Based Field Programmable Gate Array[J]. Atomic Energy Science and Technology, 2009, 43(12): 1128-1132. DOI: 10.7538/yzk.2009.43.12.1128
Citation: GAO Bo, YU Xue-feng, REN Di-yuan, WANG Yi-yuan, LI Peng-wei, YU Yue. Total Ionizing Dose Effect for Altera SRAM-Based Field Programmable Gate Array[J]. Atomic Energy Science and Technology, 2009, 43(12): 1128-1132. DOI: 10.7538/yzk.2009.43.12.1128

Total Ionizing Dose Effect for Altera SRAM-Based Field Programmable Gate Array

  • For investigating the total-dose radiation effects of Altera SRAM-based field programmable gate array (FPGA), the comparisons that some parameters varied with the total dose were made, such as the output waveforms of the distinct modules, the power currents under the different programs and the high-low voltages in the output terminal. The experiment results show the difference of the function of device and the power current with the variety of the total dose and the similar trend of the power currents under the different programs varies with the total dose. In conclusion, the power current can be regarded as a sensitive parameter to judge the invalidation of the device in the total-dose radiation experiment.
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