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WANG Gui-zhen, GUO Xiao-qiang, LI Rui-bin, BAI Xiao-yan, YANG Shan-chao, LIN Dong-sheng, GONG Jian-cheng. Damage Pattern of Transient γ-Radiation in 64K CMOS SRAM[J]. Atomic Energy Science and Technology, 2010, 44(1): 121-123. DOI: 10.7538/yzk.2010.44.01.0121
Citation: WANG Gui-zhen, GUO Xiao-qiang, LI Rui-bin, BAI Xiao-yan, YANG Shan-chao, LIN Dong-sheng, GONG Jian-cheng. Damage Pattern of Transient γ-Radiation in 64K CMOS SRAM[J]. Atomic Energy Science and Technology, 2010, 44(1): 121-123. DOI: 10.7538/yzk.2010.44.01.0121
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Damage Pattern of Transient γ-Radiation in 64K CMOS SRAM

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  • Transient irradiation tests on a 64K CMOS SRAM 6264 were performed with different width γ-pulses. The numbers of upset were measured at different dose rates. Damage pattern in SRAM under transient γ-radiation was presented. The results indicate that the transient upset in 6264 is induced from rail span collapse.
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