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LI Peng-wei, GUO Qi, REN Di-yuan, YU Yue, LAN Bo, LI Mao-shun. Annealing Effects of Charge Coupled Devices After 60Co γ Irradiation[J]. Atomic Energy Science and Technology, 2010, 44(5): 603-607. DOI: 10.7538/yzk.2010.44.05.0603
Citation: LI Peng-wei, GUO Qi, REN Di-yuan, YU Yue, LAN Bo, LI Mao-shun. Annealing Effects of Charge Coupled Devices After 60Co γ Irradiation[J]. Atomic Energy Science and Technology, 2010, 44(5): 603-607. DOI: 10.7538/yzk.2010.44.05.0603
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Annealing Effects of Charge Coupled Devices After 60Co γ Irradiation

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  • Annealing experiment of commercial charge coupled devices (CCD) irradiated by gamma rays was carried out at room temperature and 100 ℃. Power currents, output signal voltage and optical response sensitivity of CCD were investigated during experiment. The result shows that oxide charges and interface traps result in different behaviors of CCD’s parameter during room temperature and 100 ℃ annealing.
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