MA Ying-qi, FENG Guo-qiang, AN Guang-peng, ZHANG Zhen-long, HUANG Jian-guo, HAN Jian-wei. Experimental Study on Single Event Transients of 4N49 Optocoupler[J]. Atomic Energy Science and Technology, 2010, 44(6): 764-768. DOI: 10.7538/yzk.2010.44.06.0764
Citation: MA Ying-qi, FENG Guo-qiang, AN Guang-peng, ZHANG Zhen-long, HUANG Jian-guo, HAN Jian-wei. Experimental Study on Single Event Transients of 4N49 Optocoupler[J]. Atomic Energy Science and Technology, 2010, 44(6): 764-768. DOI: 10.7538/yzk.2010.44.06.0764

Experimental Study on Single Event Transients of 4N49 Optocoupler

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  • Received Date: December 31, 1899
  • Revised Date: December 31, 1899
  • The single event transient (SET) effect of the 4N49 optocoupler was tested by pulsed laser experimental methodology. The characteristic of SET as amplitude and width was qualitatively investigated with the simulation of pulsed laser. A liner energy transfer (LET) threshold of 10 MeV•cm2•mg-1 was measured when the bias voltage was 10 V. The saturated SET cross-section is about 1.2×10-3cm2. The SET effect of 4N49 optocoupler on the following digital gate circuit was validated. The circuit-level design technique for mitigation of SET is reasonable and effective, and the threshold LET of 7.89 MeV•cm2•mg-12 can be improved to 22.19 MeV•cm2•mg-1. The experiment study on the SET of 4N49 optocoupler provides an appropriate methodology to the SET test of the optics and their hardness assurance.
  • [1]
    KOGA R, PINKERTON S D, MOSS S C, et al. Observation of single event upset in analog microcircuits[J]. IEEE Trans Nucl Sci, 1993, 40(6): 1 838.
    [2]
    JOHNSTON A H, SWIFT G M, MIYAHIRA T, et al. Single event upset effects in optocouplers[J]. IEEE Trans Nucl Sci, 1998, 45(6): 2 867.
    [3]
    ECOFFET R, DUZELLIER R S, TASTET P, et al. Observations of heavy ion induced transients in linear microcircuits[C] ∥1994 IEEE Radiation Effects Data Workshop Record. Tuscon, Arizona, US: [s.n.], 1994: 72-77.
    [4]
    LABEL K A, MARSHALL P W, MARSHALL C J, et al. Proton-induced transients in optocouplers: In-flight anomalies, ground irradiation test, mitigation and implications[J]. IEEE Trans Nucl Sci, 1997, 44(6): 1 885-1 892.
    [5]
    LABEL K A, KNIFFIN S D, REED R A, et al. A compendium of recent optocoupler radiation test data[C] ∥IEEE Radiation Effects Data Workshop. Tuscon, Arizona, US: [s.n.], 2000: 123-146.
    [6]
    JOHNSTON A. Optoelectronic devices with complex failure modes [C] ∥IEEE NSREC Short Course. [S.l.] : [s.n.], 2000: 1-63.
    [7]
    LARSSON S, MATTSSON S. Heavy ion effects in optocouplers, european space agency contract report, D-PL-REP-5166-SE[R]. [S.l.] : [s.n.], 2004.
    [8]
    封国强,马英起,张振龙,等,光电耦合器的单粒子瞬态脉冲效应研究[J]. 原子能科学技术,2008,42(增刊):36-42.
    FENG Guoqiang, MA Yingqi, ZHANG Zhenlong, et al. Study of single event transients effect for optocoupler[J]. At Energy Sci Technol, 2008, 42(Suppl.): 36-42(in Chinese).
    [9]
    DARRACQ F, LAPUYADE H, BUARD N, et al. Backside SEU laser testing for commercial off-the-shelf SRAMs[J]. IEEE Trans Nucl Sci, 2002, 49: 2 777.

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