Preparation of Metal Uranium Films by Magnetron Sputtering

Feasibility of preparation of high-purity metal uranium films by magnetron sputtering deposition was studied. Microstructure, composition, interface of U/Al and surface morphology were analyzed by X-ray diffraction (XRD), Auger electron spectroscopy (AES) and scanning electron microscopy (SEM). It shows that uranium films prepared by magnetron sputtering deposition are purity metal states. Oxygen and other impurity elements in the uranium films are below the detection limit of Auger electron spectroscopy. There is interdiffusion action at U/Al interface to formed UAl_x alloys. Depth of interdiffusion interface is about 10 nm. Root-mean-square (RMS) surface roughness of uranium films is fine than 15 nm.