Radiation Effects of 10-bit CMOS Analog to Digital Converters Under Different Bias Conditions

Radiation effects and room-temperature annealing behavior of CMOS analog to digital converters (ADC) irradiated by ⁶⁰Co γ-rays at various biased conditions were investigated. The results show that the response of the ADC is very different at different bias conditions. The worst irradiation bias condition is zero bias at 0.25 Gy/s(Si) irradiation. Based on the analysis of the mechanism of CMOS ionizing radiation damage, possible sensitive parameters and mechanism for this response werediscussed.