Single Event Upset Cross Section Calculation for Secondary Particles Induced by Proton Using Geant4

Based on Monte-Carlo software Geant4, a model for calculating the proton single event upset (SEU) cross section of SRAM cell was presented. The secondary particles induced by protons were considered and effective sensitive regions were determined according to the range of the secondary particles. The single event upset and multiple bits upset (MBU) cross sections for protons with different energy were calculated. The results are in agreementwith the theoretical and experimental data.