ZOU De-hui, GAO Hui, LU Yi, AI Zi-hui. Monitor Technology About Neutron Displacement Damage[J]. Atomic Energy Science and Technology, 2010, 44(增刊): 472-475. DOI: 10.7538/yzk.2010.44.suppl.0472
Citation: ZOU De-hui, GAO Hui, LU Yi, AI Zi-hui. Monitor Technology About Neutron Displacement Damage[J]. Atomic Energy Science and Technology, 2010, 44(增刊): 472-475. DOI: 10.7538/yzk.2010.44.suppl.0472

Monitor Technology About Neutron Displacement Damage

  • The silicon bipolar transistors have been used as displacement damage monitors to obtain the characteristics of different neutron fields, by the liner relationship between the reciprocal gain and neutron fluence. Two different data analysis methods were adopted to compute the relative damage constants of two silicon displacement damage monitor arrays respectively. The results lay a foundation for choosing the displacement damage monitors and analyzing the monitoring data on present experimentation and test technique.
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