JIN Xiao-ming, FAN Ru-yu, CHEN Wei, YANG Shan-chao, LIN Dong-sheng. Gamma Irradiation Induced Total Dose Effects of EE80C196KC20 Single Chip Microprocessor[J]. Atomic Energy Science and Technology, 2010, 44(增刊): 528-532. DOI: 10.7538/yzk.2010.44.suppl.0528
Citation: JIN Xiao-ming, FAN Ru-yu, CHEN Wei, YANG Shan-chao, LIN Dong-sheng. Gamma Irradiation Induced Total Dose Effects of EE80C196KC20 Single Chip Microprocessor[J]. Atomic Energy Science and Technology, 2010, 44(增刊): 528-532. DOI: 10.7538/yzk.2010.44.suppl.0528

Gamma Irradiation Induced Total Dose Effects of EE80C196KC20 Single Chip Microprocessor

  • An on-line test system of single chip microprocessor EE80C196KC20 for total ionizing dose radiation effects was presented. The total ionizing dose exposure was performed using a 60Co irradiator at a dose rate of 20 rad(Si)/s. The degradation process and sensitive parameters were investigated in detail. The failure dose threshold was obtained and the results show that the supply current and output voltage of I/O port and PWM change versus total ionizing dose regularly. The degradation mechanism was discussed associated with fabrication technology and circuit conformation and is significant for radiation hardness assurance.
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