Similarities and Differences Between Pulsed and Steady γ Total Dose Effect in 54HC CMOS Devices

The accumulative dose of the existing pulsed radiation facility is smaller than the actual environment dose. Then the studies of similarities and differences between pulsed and ⁶⁰Co γ total dose damage in 54HC CMOS were carried out. Devices effect damage factor was acquired in order to predict pulsed total dose damage threshold through steady-state total dose damage threshold. Study results indicate that total dose damage due to steady-state irradiation is more serious than that due to pulsed irradiation no matter which sensitive parameters are selected as key factors for damage similarities and differences studies. The threshold voltage shift and static power current due to steady-state total dose is always bigger than that due to pulsed total dose.