WANG De-kun, CAO Zhou, LIU Hai-nan, YANG Xian. Backside Pluse Laser Testing for Single Event Effect[J]. Atomic Energy Science and Technology, 2011, 45(7): 884-887. DOI: 10.7538/yzk.2011.45.07.0884
Citation: WANG De-kun, CAO Zhou, LIU Hai-nan, YANG Xian. Backside Pluse Laser Testing for Single Event Effect[J]. Atomic Energy Science and Technology, 2011, 45(7): 884-887. DOI: 10.7538/yzk.2011.45.07.0884

Backside Pluse Laser Testing for Single Event Effect

  • To deal with the increasing metal layers in the front side of integrated circuit, the backside single event effects laser testing method based on the experimental results of the unhardened SRAM IL-2 and the hardened SRAM 1020-2 was presented. The problems that involved backside laser testing were discussed. The hardened validity was obtained by comparing the effective energy threshold between both samples.
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