Research on Electron Irradiation Damage Effects of Charge Coupled Device

In order to research the electron beam irradiation damage effects of CCD, TCD1209 linear CCD was irradiated by the 1.1 MeV electron beam under two kinds of fluence rates. Room temperature annealing was carried after the irradiation experiment. In the experiment, photoelectric responsibility, dark current, reference voltage, and consumption current of CCDs were investigated. The results show that the damage of CCD under electron irradiation is total ionization dose effect, and is similar to time dependent effect of MOS devices.