Research on Total Dose Irradiation and Annealing Effect of Static Random Access Memory

By comparing changes of device parameters (standby and operating power supply currents) and functional parameters (errors) with the total radiation dose and annealing time for 1 Mbit commercial static random access memory (SRAM) under the six biases, impacts of the different working conditions on radiation damage and annealing at the different biases and temperatures (25 ℃ and 100 ℃) were investigated. The different biases have great influence on the degradation and annealing recovery of functions and parameters of the device. Standby and operating power supply currents are sensitive parameters of the device. Radiation damage in device under the static biases is the most serious.