Citation: | LIAO Guo, HE Zhi-bing, CHEN Tai-hong, XU Hua, LI Jun, CHEN Jia-jun. Effect of Sputtering Power on Structure and Properties of Bi Film Deposited by DC Magnetron Sputtering[J]. Atomic Energy Science and Technology, 2012, 46(6): 749-753. DOI: 10.7538/yzk.2012.46.06.0749 |
[1] |
YANG F Y, LIU K, HONG K,et al. Large magnetoresistance of electrodeposited single-crystal bismuth thin films[J]. Science, 1999, 284(21): 1 335-1 337.
|
[2] |
SMITH G E, BARAFF G A, ROWELL J M. Effective g factor of electrons and holes in bismuth[J]. Phys Rev A, 1964, 135: 1 118-1 124.
|
[3] |
ASAHI H, KINBARA A. Size effect in the electrical properties of thin epitaxial bismuth films[J]. Thin Solid Films, 1980, 66: 131-137.
|
[4] |
LU M, ZIEVE R J, van HULST A, et al. Low-temperature electrical-transport properties of singlecrystal bismuth films under pressure[J]. Phys Rev B, 1996, 53(3): 1 609-1 615.
|
[5] |
林华平,吴卫东,何智兵,等. 膜厚对直流磁控溅射Nb薄膜微结构的影响[J]. 强激光与粒子束,2008,20(3):413-418.
LIN Huaping, WU Weidong, HE Zhibing, et al. Effects of thickness on microstructure and properties of niobium films deposited by DC magnetron sputtering[J]. High Power Laser and Patical Beams, 2008, 20(3): 413-418(in Chinese). |
[6] |
程丙勋,吴卫东,何智兵,等. 溅射功率对直流磁控溅射Ti膜结构的影响[J]. 强激光与粒子束,2006,18(6):961-965.
CHENG Bingxun, WU Weidong, HE Zhibing, et al. Effects of sputtering power on structure and properties of Ti films deposited by DC magnetron sputtering[J]. High Power Laser and Patical Beams, 2006, 18(6): 961-965(in Chinese). |
[7] |
刘志文,谷建峰,付伟佳,等. 工作气压对磁控溅射ZnO薄膜结晶特性及生长行为的影响[J]. 物理学报,2006,55(10):5 479-5 485.
LIU Zhiwen, GU Jianfeng, FU Weijia, et al. Influence of working pressure on the crystallinity and growth behavior of ZnO films deposited by reactive radio-frequency magnetron sputtering[J]. Acta Phys Sin, 2006, 55(10): 5 479-5 485(in Chinese). |
[8] |
齐红基,易葵,贺洪波,等. 溅射粒子能量对金属Mo薄膜表面特性的影响[J]. 物理学报, 2004,53(12):4 398-4 404.
QI Hongji, YI Kui, HE Hongbo, et al. The effect of sputtering particle energy on surface characteristics of Mo thin films[J]. Acta Phys Sin, 2004, 53(12): 4 398-4 404(in Chinese). |
[9] |
ECKERTOVA L. Physics of thin films[M]. New York, US: Plenum Press, 1984: 204-205.
|
[10] |
谢婧,黎兵,李愿杰,等. 射频磁控溅射法制备ZnS多晶薄膜及其性质[J]. 物理学报,2010,59(8):5 749-5 754.
XIE Jing, LI Bing, LI Yuanjie, et al. Study of ZnS thin films prepared by RF magnetron sputtering technique[J]. Acta Phys Sin, 2010, 59(8): 5 749-5 754(in Chinese). |
[11] |
杨于兴,胡赓祥. 薄膜X射线应力分析技术的研究[J]. 上海交通大学学报,1994,28(6):52-58.
YANG Yuxing, HU Gengxiang.The study of thin film X-ray stress analysis [J]. Journal of Shanghai Jiao Tong University, 1994, 28(6): 52-58(in Chinese). |
[12] |
埃克托瓦. 薄膜物理学[M]. 王广阳,等译. 北京:科学出版社,1986.
|
[13] |
邵淑英,范正修,范瑞瑛,等. ZrO2薄膜残余应力实验研究[J]. 光学学报,2004,24(4):437-441.
SHAO Shuying, FAN Zhengxiu, FAN Ruiying,et al. Study of residual stress in ZrO2 thin films [J]. Acto Optical Sin, 2004, 24(4): 437-441(in Chinese). |
[14] |
张国炳,郝一龙,田大宇,等. 多晶硅薄膜应力特性研究[J]. 半导体学报,1999,20(6):463-467.
ZHANG Guobing, HAO Yilong, TIAN Dayu, et al. Residual stress properties of polysilicon thin film[J]. Journal of Semiconductors, 1999, 20(6): 463-467(in Chinese). |
[15] |
吴桂芳,史守华,何玉平,等. 退火温度对硅基溅射铜膜应力的影响[J]. 真空科学与技术学报,2002,22(2):139-143.
WU Guifang, SHI Shouhua, HE Yuping, et al. Influence of annealing temperature on microstructures and stress of sputtered Cu film on Si substrate[J]. Vacuum Science and Technology, 2002, 22(2): 139-143(in Chinese). |