HU Rui, KAN Wen-tao, DONG Wen-li, LUO Shun-zhong, ZHONG Zheng-kun, YANG Yu-qing. Preparation of φ33 mm Simulative Source of Nickel With Pulse-Plating Technology[J]. Atomic Energy Science and Technology, 2012, 46(增刊): 174-179. DOI: 10.7538/yzk.2012.46.suppl.0174
Citation: HU Rui, KAN Wen-tao, DONG Wen-li, LUO Shun-zhong, ZHONG Zheng-kun, YANG Yu-qing. Preparation of φ33 mm Simulative Source of Nickel With Pulse-Plating Technology[J]. Atomic Energy Science and Technology, 2012, 46(增刊): 174-179. DOI: 10.7538/yzk.2012.46.suppl.0174

Preparation of φ33 mm Simulative Source of Nickel With Pulse-Plating Technology

  • The DC constant current power with a magnitude of milliampere has one defect of lower protect voltage. This brought itself not suitable for the preparation of large area and high radioactivity 63Ni. Based on a positive pulse power, the effects from some experiment conditions on the plating results in the simple plating solution were studied. The result shows that 95% of 58Ni deposition rate is gained under the condition of cathode current density of 18 mA/cm2, room temperature, pulse width of 80%, frequency of 5 kHz and plating time of 2.5 h.
  • loading

Catalog

    Turn off MathJax
    Article Contents

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return